Paper Title :A Normally-Off Algan/Gan Hemt with Field Plate and Hybrid Drain

Author :Yu-Wen Lai, Hsin-Chiang You

Article Citation :Yu-Wen Lai ,Hsin-Chiang You , (2024 ) " A Normally-Off Algan/Gan Hemt with Field Plate and Hybrid Drain " , International Journal of Advance Computational Engineering and Networking (IJACEN) , pp. 63-66, Volume-12,Issue-2

Abstract : Throughout, our requirements for power devices have centered on their performance, controllability, reliability, and high-frequency capabilities. In pursuit of superior power devices, we have investigated various structures of Normallyoff AlGaN/GaN HEMT devices. Compared to traditional Normally-off AlGaN/GaNHEMT devices, the inclusion of a Field Plate (FP) structure helps to disperse electric field peaks, enhancing breakdown voltage. The Hybrid Drain (HD) structure suppresses current collapse and reverse breakdown when compared to conventional structures.This paper conducts a DC characteristics analysis on three structures: FP-only, HD-only, and FP-HD composite structure. By characterizing the results, improved electrical performance has been achieved, expanding the device's application range. Experimental validation confirms that each of the three structures exhibits favorable characteristics in terms of threshold Voltage (Vth), on-state Resistance (Ron), and maximum saturation current (IDS·max). Keywords - Field Plate, Hybrid DrainandNormally-off AlGaN/GaNHEMT

Type : Research paper

Published : Volume-12,Issue-2

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