Numerical Simulation of Electronic Transitions in GaAs Step Quantum Well under External Electric Field
In this paper, the impact of an external electric field on the three lowest energy levels and the optical absorption
in a step GaAs quantum well are investigated through a numerical solution of Schrödinger equation. Using a finite difference
method, we have calculated the wave functions and their energy levels and the confining potential. The obtained results
show that the inter sub band transition and the optical absorption coefficient can be tuned by varying the intensity of the
applied electric field along the hetero structure. The obtained results can be used to fabricate a large variety of photonic
devices based on electronic transitions.
Keywords - GaAs step Quantum well, inter sub band transitions, optical absorption.