International Journal of Advances in Science, Engineering and Technology(IJASEAT)
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  Journal Paper

Paper Title
Numerical Simulation of Electronic Transitions in GaAs Step Quantum Well under External Electric Field

Abstract
In this paper, the impact of an external electric field on the three lowest energy levels and the optical absorption in a step GaAs quantum well are investigated through a numerical solution of Schrödinger equation. Using a finite difference method, we have calculated the wave functions and their energy levels and the confining potential. The obtained results show that the inter sub band transition and the optical absorption coefficient can be tuned by varying the intensity of the applied electric field along the hetero structure. The obtained results can be used to fabricate a large variety of photonic devices based on electronic transitions. Keywords - GaAs step Quantum well, inter sub band transitions, optical absorption.


Author - Hassen Dakhlaoui

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| Published on 2018-09-07
   
   
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