Paper Title :The Effects of Sulfurization Pressure on Conversion Efficiency of Cu (In, Ga) (S, Se) Thin Film Solar Cell
Author :Peng-Cheng, Huang, Chia-Chi, Sung
Article Citation :Peng-Cheng ,Huang ,Chia-Chi ,Sung ,
(2017 ) " The Effects of Sulfurization Pressure on Conversion Efficiency of Cu (In, Ga) (S, Se) Thin Film Solar Cell " ,
International Journal of Advances in Science, Engineering and Technology(IJASEAT) ,
pp. 14-17,
Volume-5, Issue-1, Spl. Iss-3
Abstract : Cu (In, Ga) (S, Se) (CIGSSe) thin film solar cell have been prepared by sputtering-selenization method with
sulfurization process using sulfur powder (without toxic H 2 S gas) in a tube type resistance furnace to form CIGSSe reaction
layer. Themorphology of the CIGSSe film becomes smoothly and densely uniform when increasing sulfurization pressure.
The sulfur concentration of S/(Se+S) ratio slightly increase from 0.277 to 0.310 with rising the sulfurization pressure value
due to the long gas residence time accelerate the reaction rate.A maximum solar cell efficiency of 12.7% was achieved at760
Torr.
Keywords: Sulfurization, Sputtering-Selenization, Rapid Thermal Annealing, CIGSSe.
Type : Research paper
Published : Volume-5, Issue-1, Spl. Iss-3
DOIONLINE NO - IJASEAT-IRAJ-DOIONLINE-7408
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Copyright: © Institute of Research and Journals
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Published on 2017-06-01 |
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