Paper Title
Analysis of Transmission and Reflection Pulse on Metal/Semiconductor Interface with PML and MUR Boundary Condition for Carrier Dynamics Effects

Abstract
The paper mainly emphasizes on the analysis of transmission and reflection pulse on metal/semiconductor interface with PML and MUR boundary condition for carrier dynamics effects. The research problem in this study is the carrier dynamic effects on metal/semiconductor interface for high performance semiconductor device. The research solution is to make the software model with finite difference time domain (FDTD) solution for transmission and reflection pulse between metal and semiconductor interface for carrier dynamics effects. The objective of this study is to find the quantum mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor technology development. The analysis was carried out with the help of MATLAB. The simulation results confirm that the results on transmission and reflection pulses between interface of metal and semiconductor for carrier dynamics effects could meet the results of experimental studies. Keywords - Transmission, Reflection, Metal/Semiconductor Interface, PML, MUR, Carrier Dynamics Effects, FDTD.