Paper Title :Numerical Study on Luminescence Intensity of Gallium Indium Phosphide Led

Author :Htet Htetaung, May Su Hlaing, Tin Tin Hla

Article Citation :Htet Htetaung ,May Su Hlaing ,Tin Tin Hla , (2024 ) " Numerical Study on Luminescence Intensity of Gallium Indium Phosphide Led " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 1-5, Volume-12,Issue-3

Abstract : Lighting technology, especially LEDs, which are semiconductor devices, can convert electrical energy into optical energy. The red color emission of Gallium Indium Phosphide (GaInP) LEDs provides excellent luminous efficiency in high-brightness LEDs. The main goals of energy band structures, carrier distribution of electrons in the conduction band, hole distribution in the valence band, and Fermi-Dirac distribution function of the optical properties of ternary compounds are described. Based on the carrier concentration of electrons and holes in the conduction band and valence band,luminescence intensity versus photon energy has been attained. These designs are calculated using an analytical approach, and the simulation results are presented using tools for Computer based Simulation. Keywords - Gallium Indium Phosphide, Light Emitting Diodes, Light Intensity, Computer Based Simulation, Carrier Distribution

Type : Research paper

Published : Volume-12,Issue-3

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