Paper Title :Probing the Effect of Length Scaling and Defects on the Behavior of Hetero-Material Double-Gate TFET Biosensor

Author :Priyanka Goma, Ashwani K. Rana

Article Citation :Priyanka Goma ,Ashwani K. Rana , (2024 ) " Probing the Effect of Length Scaling and Defects on the Behavior of Hetero-Material Double-Gate TFET Biosensor " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 25-29, Volume-12,Issue-4

Abstract : In this paper an investigation of the scalability of a hetero-material Double-Gate (DG) Tunnel FET biosensor is made and the intricate features of Trap-Assisted Tunneling (TAT) are explored. To mitigate the unpredictability associated with the process, a dopingless technique to induce p+(source) and n(drain) regions in the TFET structure is employed. However, acknowledging the potential presence of defect(trap) sites in the n-doped strained Si-Ge pocket, a comprehensive analysis is conducted during simulation utilizing specific models. The examination of different trap sites viz. shallow and deep, combined with the assessment of the impact of TAT, reveals that deep traps significantly influence the sensitivity of the biosensor. Furthermore, a study of the scaling capability concerning the gate length, body thickness, and cavity length to evaluate the biosensor's performance is also evaluated. This exploration provides valuable insights into the critical factors shaping the performance and reliability of the proposed TFET biosensor involved in scaling and its implications on the biosensor's performance metrics. Keywords - Biosensor, Hetero-material Double-Gate TFET, Trap-Assisted Tunneling (TAT), Strained Si-Ge pocket, Sensitivity

Type : Research paper

Published : Volume-12,Issue-4

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