International Journal of Electrical, Electronics and Data Communication (IJEEDC)
eISSN:2320-2084 , pISSN:2321-2950
.
Follow Us On :
current issue
Volume-10,Issue-5  ( May, 2022 )
ARCHIVES
  1. Volume-10,Issue-4  ( Apr, 2022 )
  2. Volume-10,Issue-3  ( Mar, 2022 )
  3. Volume-10,Issue-2  ( Feb, 2022 )

Statistics report
Aug. 2022
Submitted Papers : 80
Accepted Papers : 10
Rejected Papers : 70
Acc. Perc : 12%
Issue Published : 113
Paper Published : 1559
No. of Authors : 4245
  Journal Paper


Paper Title :
Performance Enhancement Of Double Gate Junctionless Transistor Using High-K Spacer

Author :Anup Kumar Mandia, Ashwani K. Rana

Article Citation :Anup Kumar Mandia ,Ashwani K. Rana , (2014 ) " Performance Enhancement Of Double Gate Junctionless Transistor Using High-K Spacer " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 5-8, Volume-2,Issue-8

Abstract : In this paper the impact of varying spacer dielectric on both sides of gate oxide on the device performance of a symmetric double gate Junctionless transistor (DGJNT) is reported. The performance parameter of the device considered in this study are ION/IOFF, DIBL and subthreshold slope. It is observed that there is a significant improvement in ION/IOFF, DIBL and subthreshold slope with spacer dielectric.

Type : Research paper

Published : Volume-2,Issue-8


DOIONLINE NO - IJEEDC-IRAJ-DOIONLINE-1085   View Here

Copyright: © Institute of Research and Journals

| PDF |
Viewed - 55
| Published on 2014-08-01
   
   
IRAJ Other Journals
IJEEDC updates
Volume-10,Issue-6(June,2022) Want to join us ? CLick here http://ijeedc.iraj.in/join_editorial_board.php
The Conference World

JOURNAL SUPPORTED BY

ADDRESS

Technical Editor, IJEEDC
Department of Journal and Publication
Plot no. 30, Dharma Vihar,
Khandagiri, Bhubaneswar, Odisha, India, 751030
Mob/Whatsapp: +91-9040435740