IJEEDC Impact of Heterojunction Variations & Metallic Drain on The Dual-Gate Tfets' Functioning

Journal Paper

Paper Title :Impact of Heterojunction Variations & Metallic Drain on The Dual-Gate Tfets' Functioning

Author :Akansha Varshney, M.Ejaz A. Lodhi

Article Citation :Akansha Varshney ,M.Ejaz A. Lodhi , (2024 ) " Impact of Heterojunction Variations & Metallic Drain on The Dual-Gate Tfets' Functioning " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 12-17, Volume-12,Issue-9

Abstract : In this research project, we introduce an innovative method to enhance the functioning of dual gate TFETs by integrating different hetero-materials at the source regions. Our 2D calibrated simulation studies demonstrate a remarkable improvement in ambipolar current suppression, achieving a reduction of approximately 12 orders of magnitude when a hetero-material source and a metallic drain are utilized & adjusting the gate voltage spanning between -1 V and 0 V, compared to conventional DG_TFETs. Additionally, our results show an enhanced subthreshold slope of 44 mV/decade (AV-SS) and current ratio between ON and OFF current (ION/IOFF) is 9.15 × 1012.The significant reduction in ambipolar current is ascribed to the reduced rate of BTBT, which is facilitated via the channel/drain interface creating a Schottky barrier. We also comprehensively examine the impact of various parameters on the functionality of the device. Our study indicates that optimal performance can be further attained by fine-tuning these parameters.This research highlights the potential for enhancing the efficiency and functionality of DG_TFETs through strategic hetero-material integration, providing valuable insights for the development of next-generation electronic devices. The abstract succinctly summarizes the key findings and implications of the study. Keywords - Shockley-Read-Hall, Tunnel Field-Effect Transistors

Type : Research paper

Published : Volume-12,Issue-9


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Mar. 2025
Submitted Papers	:	80
Accepted Papers	:	10
Rejected Papers	:	70
Acc. Perc	:	12%
Issue Published	:	143
Paper Published	:	1781
No. of Authors	:	4956

Published : Volume-12,Issue-9

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