Paper Title :Considering the Effects on Polarization, Band Gap and Thermal Conductivity Analyses on Indium Nitride-Based High Electron Mobility Transistor (HEMT) Design

Author :May Nwe Myint Aye, Than Htike Aung

Article Citation :May Nwe Myint Aye ,Than Htike Aung , (2019 ) " Considering the Effects on Polarization, Band Gap and Thermal Conductivity Analyses on Indium Nitride-Based High Electron Mobility Transistor (HEMT) Design " , International Journal of Electrical, Electronics and Data Communication (IJEEDC) , pp. 1-4, Volume-7,Issue-6

Abstract : The paper focuses on the effects of polarization, band gap and thermal conductivity on Indium Nitride (InN)-based High Electron Mobility Transistor (HEMT) design for microwave applications. For the polarization effects on that transistor design, the piezoelectric polarization and spontaneous polarization have been considered. For the effect of band gap change, the temperature is vital role to consider for the analysis as a function of modelling. For the thermal conductivity, the output current and input voltage between the three electrodes of HEMT model. The considered temperature is room temperature condition. The theoretical analysis on considering those effects could be provided to enhance the device performance of the proposed applications. The simulation results have been checked with the experimental results of literature reviews. Keywords - Polarization, Band Gap, Thermal Conductivity Analyses, Indium Nitride, High Electron Mobility Transistor

Type : Research paper

Published : Volume-7,Issue-6

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