Paper Title :Investigating The Electrical Features of Hetero Junctions: P-EUS And N-CDS Interface

Author :Rekha S. Bhalekar, M.M. Betkar

Article Citation :Rekha S. Bhalekar ,M.M. Betkar , (2024 ) " Investigating The Electrical Features of Hetero Junctions: P-EUS And N-CDS Interface " , International Journal of Advances in Science, Engineering and Technology(IJASEAT) , pp. 45-46, Volume-12,Issue-1

Abstract : Two dissimilar materials brought into immediate contact to form a junction result into heterojunctions. SILAR (Successive Ionic Layer Adsorption and Reaction) substrates on the heterojunction of p-EuS/n-CdS formed on Fluorine doped tin oxide coated glass. Heterojunction characteristics current-voltage (I-V) are studied. The formed heterojunctions p- EuX (X=S, Se and O)/ n-CdS are applied in forward bias and in reverse bias, to determine I-V characteristics. The average ideality factor values n1 and n2 for and n3 for p-S/ n-CdS are found reported. Keywords - Heterojunctions, SILAR, p-EuS, n-Cds, I-V, Semiconductor

Type : Research paper

Published : Volume-12,Issue-1

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