Paper Title
Numerical Study on Luminescence Intensity of Gallium Indium Phosphide Led
Abstract
Lighting technology, especially LEDs, which are semiconductor devices, can convert electrical energy into
optical energy. The red color emission of Gallium Indium Phosphide (GaInP) LEDs provides excellent luminous efficiency
in high-brightness LEDs. The main goals of energy band structures, carrier distribution of electrons in the conduction band,
hole distribution in the valence band, and Fermi-Dirac distribution function of the optical properties of ternary compounds
are described. Based on the carrier concentration of electrons and holes in the conduction band and valence
band,luminescence intensity versus photon energy has been attained. These designs are calculated using an analytical
approach, and the simulation results are presented using tools for Computer based Simulation.
Keywords - Gallium Indium Phosphide, Light Emitting Diodes, Light Intensity, Computer Based Simulation, Carrier
Distribution